# PECVD Tube Furnace

The CVSIC 1200℃ PECVD Tube Furnace is designed for PECVD processes in research and industry. It has a high-purity alumina fiber chamber, resistance wire heating, and a maximum temperature of 1200℃ (recommended ≤1100℃). The RF plasma source reduces reaction temperature and increases deposition rates. Triple mass flow controllers and a gas mixing system provide precise control of gas flow for film growth.

This model offers 50-segment programmable control with ±1°C accuracy. Its dual-layer design maintains surface temperatures below 50°C, and the low-vacuum system ensures process stability. A preheating zone improves film quality and uniformity. The CVSIC PECVD Tube Furnace supports deposition, nanomaterial synthesis, and plasma processes for research or small-scale production .

## CVSIC PECVD Tube Furnace Application

The CVSIC PECVD Tube Furnace is widely used in the following fields and processes:

- Thin-film Deposition: Preparation of metal films, ceramic films, composite films, and semiconductor thin films for photovoltaic and microelectronics industries.

- Nanomaterial Synthesis: Synthesis of high-performance nanomaterials such as carbon nanotubes, graphene, and silicon nanowires.

- Lithium Battery Materials: PECVD coating processes for battery electrode materials to enhance performance and stability.

- Ceramics and Composites: Deposition and thermal treatment of ceramic and composite films under high-temperature conditions.

- Research Applications: Used by universities and research institutions for new material development and plasma process studies.

- Plasma Cleaning and Etching: Supports surface cleaning and microstructure etching to meet precision processing demands.

## CVSIC PECVD Tube Furnace Features

- High Deposition Rate: RF plasma (13.56 MHz, 500W) enables up to 10Å/s deposition.

- Superior Uniformity: Multi-point RF and gas feed achieve film uniformity within 8%.

- High Consistency: Design ensures less than 2% variation between substrates.

- Stable Process: Equipment guarantees continuous PECVD operations.

- Precise Temperature Control: 50-segment PID control, ±1℃ accuracy, ±5℃ uniformity.

- High Vacuum: Ultimate vacuum of 7×10⁻⁴ Pa; max -0.1 MPa.

- Safety: Auto shutdown for over-temp/leakage; air-cooled to <50°C surface.

- Durable Build: Adjustable flange extends tube life and cuts maintenance.

## Customization Services

Trust CVSIC to deliver comprehensive customization, ensuring every aspect of your PECVD process requirements is expertly matched for maximum results:

- Furnace Tube Customization: Tube diameter (default 100mm, customizable) and heating zone length (220-1650mm).

- Vacuum System: Supports rotary vane pumps, diffusion pumps, or molecular pumps to meet high vacuum (7×10⁻⁴ Pa) demands.

- Gas Control: Customizable three-channel or multi-channel mass flow controllers (0-100 sccm, 0-200 sccm, or custom ranges).

- Control System: Optional 7-inch HD touchscreen, PC connectivity software, and data logging functionality.

- Additional Features: Expandable plasma cleaning, etching, or other specialized process modules.

- Global Support: Installation guidance, operational training, and maintenance services ensure long-term stable operation.

## PECVD Tube Furnace Accessories

### Standard Accessories

- Blocking Tubes: 4 pcs

- Furnace Tube: 1 pc

- Vacuum Pump: 1 unit

- Vacuum Sealing Flanges: 2 sets

- Vacuum Gauge: 1 pc

- Gas Delivery & Vacuum Pump System: 1 set

- RF Plasma Equipment: 1 set

### Optional Accessories

- Vacuum System: Rotary vane mechanical pump, diffusion pump, molecular pump

- Flange Accessories: Quick-release flange, tee flange

- Control System: 7-inch HD touchscreen

## CVSIC PECVD Tube Furnace Specifications

## Heating System

| Max.temperature | 1200℃ (1 hour) |
| --- | --- |
| Working temperature | ≤1100℃ |
| Chamber size | Φ100*1650mm (Tube diamater is customizable) |
| Chamber material | High purity alumina fiber board |
| Thermocouple | K type |
| Temperatureaccuracy | ±1℃ |
| PECVD furnace | ● 50 programmable segments for precise control of heating rate, cooling rate and dwell time. |
| Temperature control | ● Built in PID Auto-Tune function with overheating & broken thermocouple broken protection. |
| ● PLC automatic control system by PC controller inside. |  |
| ● The temperature control system, sliding system (Time and Distance) could be controlled by program. |  |
| Heating length | 440mm |
| Constant heating length | 200mm |
| Heating element | Resistance wire |
| Power supply | Single phase, 220V, 50Hz |
| Rated power | 9kW |

## 
RF Plasma Source

| RF frequency |  | 13.56 MHz±0.005% |
| --- | --- | --- |
| Output power |  | 500W |
| Max reflect power |  | 500W |
| RF output interface |  | 50 Ω, N-type, female |
| Power stability |  | ±0.1% |
| Harmonic component |  | ≤-50dbc |
| Supply voltage/Frequency |  | Single phase AC220V 50/60HZ |
| Whole efficiency |  | >=70% |
| Power factor |  | >=90% |
| Cooling method |  | Forced air |

## 
Three precision mass flowmeters control system of PECVD furnace

| External dimension |  | 600x600x650mm |
| --- | --- | --- |
| Connector type |  | Swagelok SS joint |
| Standard range (N2) |  | 0~100sccm, 0~200sccm, or customizable |
| Accuracy |  | ±1.5% |
| Linear |  | ±0.5～1.5% |
| Repeatability |  | ±0.2% |
| Response time |  | Gas property: 1～4 Sec; |
| Electrical property: 10 Sec |  |  |
| Pressure range |  | 0.1～0.5 MPa |
| Max.pressure |  | 3MPa |
| Interface |  | Φ6,1/4” |
| Display |  | 4 digit display |
| Ambient temperature |  | 5~45 high purity gas |
| Pressure gauge |  | －0.1～0.15 MPa, 0.01 MPa/unit |
| Stop valve |  | Φ6 |
| Polish SS tube |  | Φ6 |
| Low vacuum system included |  |  |

## 

Seize the advantage with CVSIC PECVD Tube Furnaces—the cornerstone for high-efficiency, high-precision thin-film deposition. Reach out now for a tailored quote, access detailed technical manuals, or explore custom solutions. Rely on our expert team’s dedicated support to ensure your equipment exceeds expectations for experimental or production success.