PECVD Tube Furnace

The CVSIC 1200℃ PECVD Tube Furnace is designed for PECVD processes in research and industry. It has a high-purity alumina fiber chamber, resistance wire heating, and a maximum temperature of 1200℃ (recommended ≤1100℃). The RF plasma source reduces reaction temperature and increases deposition rates. Triple mass flow controllers and a gas mixing system provide precise control of gas flow for film growth.

This model offers 50-segment programmable control with ±1°C accuracy. Its dual-layer design maintains surface temperatures below 50°C, and the low-vacuum system ensures process stability. A preheating zone improves film quality and uniformity. The CVSIC PECVD Tube Furnace supports deposition, nanomaterial synthesis, and plasma processes for research or small-scale production .

CVSIC PECVD Tube Furnace Application

The CVSIC PECVD Tube Furnace is widely used in the following fields and processes:

• Thin-film Deposition: Preparation of metal films, ceramic films, composite films, and semiconductor thin films for photovoltaic and microelectronics industries.
• Nanomaterial Synthesis: Synthesis of high-performance nanomaterials such as carbon nanotubes, graphene, and silicon nanowires.
• Lithium Battery Materials: PECVD coating processes for battery electrode materials to enhance performance and stability.
• Ceramics and Composites: Deposition and thermal treatment of ceramic and composite films under high-temperature conditions.
• Research Applications: Used by universities and research institutions for new material development and plasma process studies.
• Plasma Cleaning and Etching: Supports surface cleaning and microstructure etching to meet precision processing demands.

CVSIC PECVD Tube Furnace Features

• High Deposition Rate: RF plasma (13.56 MHz, 500W) enables up to 10Å/s deposition.
• Superior Uniformity: Multi-point RF and gas feed achieve film uniformity within 8%.
• High Consistency: Design ensures less than 2% variation between substrates.
• Stable Process: Equipment guarantees continuous PECVD operations.
• Precise Temperature Control: 50-segment PID control, ±1℃ accuracy, ±5℃ uniformity.
• High Vacuum: Ultimate vacuum of 7×10⁻⁴ Pa; max -0.1 MPa.
• Safety: Auto shutdown for over-temp/leakage; air-cooled to <50°C surface.
• Durable Build: Adjustable flange extends tube life and cuts maintenance.

Customization Services

Trust CVSIC to deliver comprehensive customization, ensuring every aspect of your PECVD process requirements is expertly matched for maximum results:

• Furnace Tube Customization: Tube diameter (default 100mm, customizable) and heating zone length (220-1650mm).
• Vacuum System: Supports rotary vane pumps, diffusion pumps, or molecular pumps to meet high vacuum (7×10⁻⁴ Pa) demands.
• Gas Control: Customizable three-channel or multi-channel mass flow controllers (0-100 sccm, 0-200 sccm, or custom ranges).
• Control System: Optional 7-inch HD touchscreen, PC connectivity software, and data logging functionality.
• Additional Features: Expandable plasma cleaning, etching, or other specialized process modules.
• Global Support: Installation guidance, operational training, and maintenance services ensure long-term stable operation.

PECVD Tube Furnace Accessories

Standard Accessories

• Blocking Tubes: 4 pcs
• Furnace Tube: 1 pc
• Vacuum Pump: 1 unit
• Vacuum Sealing Flanges: 2 sets
• Vacuum Gauge: 1 pc
• Gas Delivery & Vacuum Pump System: 1 set
• RF Plasma Equipment: 1 set

Optional Accessories

• Vacuum System: Rotary vane mechanical pump, diffusion pump, molecular pump
• Flange Accessories: Quick-release flange, tee flange
• Control System: 7-inch HD touchscreen

CVSIC PECVD Tube Furnace Specifications

Seize the advantage with CVSIC PECVD Tube Furnaces—the cornerstone for high-efficiency, high-precision thin-film deposition. Reach out now for a tailored quote, access detailed technical manuals, or explore custom solutions. Rely on our expert team’s dedicated support to ensure your equipment exceeds expectations for experimental or production success.